HSM83 Silicon Epitaxial Planar Diode for High Voltage Switching ADE-208-091D(Z) Rev 4 Jun. 1996 Features • High reverse voltage. (VR = 250V) • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM83 Laser Mark F7 Package Code MPAK Outline 3 2 1 (Top View) 1 NC 2 Anode 3 Cathode HSM83 Ab.
• High reverse voltage. (VR = 250V)
• MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HSM83 Laser Mark F7 Package Code MPAK
Outline
3
2
1
(Top View)
1 NC 2 Anode 3 Cathode
HSM83
Absolute Maximum Ratings (Ta = 25°C)
Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average rectified current Junction temperature Storage temperature Note: Symbol VRM VR I FM I FSM IO Tj Tstg
*1
Value 300 250 300 2 100 125
–55 to +125
Unit V V mA A mA °C °C
1. Value at duration of 10ms.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HSM8100 |
Microsemi Corporation |
8 Amp Schottky Rectifier | |
2 | HSM825 |
Microsemi Corporation |
8 Amp Schottky Rectifier | |
3 | HSM830 |
Microsemi Corporation |
8 Amp Schottky Rectifier | |
4 | HSM835 |
Microsemi Corporation |
8 Amp Schottky Rectifier | |
5 | HSM840 |
Microsemi Corporation |
8 Amp Schottky Rectifier | |
6 | HSM845 |
Microsemi Corporation |
8 Amp Schottky Rectifier | |
7 | HSM880 |
Microsemi Corporation |
8 Amp Schottky Rectifier | |
8 | HSM88AS |
Hitachi Semiconductor |
Silicon Schottky Barrier Diode for Balanced Mixer | |
9 | HSM88ASR |
Hitachi Semiconductor |
Silicon Schottky Barrier Diode for Balanced Mixer | |
10 | HSM88WA |
Hitachi Semiconductor |
Silicon Schottky Barrier Diode for Balanced Mixer | |
11 | HSM88WK |
Hitachi Semiconductor |
Silicon Schottky Barrier Diode for Balanced Mixer | |
12 | HSM890 |
Microsemi Corporation |
8 Amp Schottky Rectifier |