HS1010E - Chengqi Semiconductor

HS1010E N-Channel MOSFET

The HS1010E is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance. 2. Feature ● RDS(ON)≦9mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum D.

Features

A A Symbol VDSS VGSS Limit 60 ± 20 85 Unit V V A 5. Thermal characteristics Parameter Thermal resistance, case-to-sink typ. Thermal resistance junction to case. Thermal resistance junction to ambient. Symbol RthCS RthJC RthJA Ratings 0.5 0.75 62 Units ° C/W ° C/W ° C/W Coperight@ Guangzhou Chengqi Semiconductor Co.,LTD.All rights reserved. www.homsemi.com Oct,2012-Ver1.0 2/5 Free Datasheet http://www.0PDF.com HS1010E N channel 60V MOSFET 6. Electrical characteristics (T A =25℃ Unless Otherwise Specified) Symbol Parameter STATIC BVDSS VGS(th) IGSS IDSS Drain-Source Breakdown Voltage .