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HS1010E |
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| Part Number | HS1010E |
| Manufacturer | Chengqi Semiconductor |
| Description | The HS1010E is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.This high density process is especially tailored to mini... |
| Features |
A A
Symbol
VDSS VGSS
Limit
60 ± 20 85
Unit
V V A
5. Thermal characteristics Parameter
Thermal resistance, case-to-sink typ. Thermal resistance junction to case. Thermal resistance junction to ambient.
Symbol
RthCS RthJC RthJA
Ratings
0.5 0.75 62
Units
° C/W ° C/W ° C/W
Coperight@ Guangzhou Chengqi Semiconductor Co.,LTD.All rights reserved. www.homsemi.com Oct,2012-Ver1.0
2/5
Free Datasheet http://www.0PDF.com
HS1010E
N channel 60V MOSFET
6. Electrical characteristics (T A =25℃ Unless Otherwise Specified) Symbol Parameter STATIC
BVDSS VGS(th) IGSS IDSS Drain-Source Breakdown Voltage ... |
| Document |
 HS1010E Data Sheet
PDF 656.16KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HS10 |
Hog Slat |
Feed Sensor |
|
| 2 | HS100 |
NEL |
Crystal Clock Oscillators |
|
| 3 | HS102M |
CDE |
Ceramic Capacitors |
|
| 4 | HS103DR |
Crydom |
DIN Rail Mount |
|
| 5 | HS103DR-D2490 |
Crydom |
DIN Rail Mount |
|