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The HMC8411LP2FE is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01 GHz to 10 GHz. The HMC8411LP2FE provides a typical gain of 15.5 dB, a 1.7 dB typical noise figure, and a typical output third-order intercept (OIP3) of 34 .
► Low noise figure: 1.7 dB typical
► Single positive supply (self biased)
► High gain: 15.5 dB typical
► High OIP3: 34 dBm typical
► 6-lead, 2 mm × 2 mm LFCSP
APPLICATIONS
► Test instrumentation
► Military communications
GENERAL DESCRIPTION
The HMC8411LP2FE is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01 GHz to 10 GHz.
The HMC8411LP2FE provides a typical gain of 15.5 dB, a 1.7 dB typical noise figure, and a typical output third-order intercept (OIP3) of 34.
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|---|---|---|---|---|
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