HMC8402 - Analog Devices

HMC8402 Low Noise Amplifier

The HMC8402 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier which operates between 2 GHz and 30 GHz. The amplifier provides 13.5 dB of gain, 2 dB noise figure, 26 dBm output IP3, and 21.5 dBm of output power at 1 dB gain compression while requiring 68 m.

Features

Output power for 1 dB compression (P1dB): 21.5 dBm typical Saturated output power (PSAT): 22 dBm typical Gain: 13.5 dB typical Noise figure: 2 dB Output third order intercept (IP3): 26 dBm typical Supply voltage: 7 V at 68 mA 50 Ω matched input/output Die size: 2.7 mm × 1.363 mm × 0.05 mm APPLICATIONS Test instrumentation Microwave radios and very small aperture terminals (VSATs) Military and space Telecommunications infrastructure Fiber optics GENERAL DESCRIPTION The HMC8402 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated.