The Hitachi HM658512A is a CMOS pseudo static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 µm Hi-CMOS process technology. It offers low power data retention by self refresh mode. It also offers easy non multiplexed address interface and easy refresh functions. HM658512A is suitable.
• Single 5 V (±10%)
• High speed Access time CE access time: 70/80/100 ns (max) Cycle time Random read/write cycle time: 115/130/160 ns (min)
• Low power Active: 250 mW (typ) Standby: 200 µW (typ)
• Directly TTL compatible All inputs and outputs
• Simple address configuration Non multiplexed address
• Refresh cycle 2048 refresh cycles: 32 ms
HM658512A Series
• Easy refresh functions Address refresh Automatic refresh Self refresh
Ordering Information
Type No. HM658512ALP-7 HM658512ALP-8 HM658512ALP-10 HM658512ALP-7V HM658512ALP-8V HM658512ALP-10V HM658512ALFP-7 HM658512ALFP-8 HM6585.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HM658128A |
Hitachi |
131072-word x 8-bit High Speed CMOS Pseudo Static RAM | |
2 | HM65 |
RCD |
PRECISION METAL FILM RESISTORS | |
3 | HM65 |
TT |
High Current Low Profile Surface Mount Inductors | |
4 | HM65161 |
MHS |
2K X 8 General Purpose CMOS SRAM | |
5 | HM65256B |
Hitachi |
32768 word x 8 Bit High Speed Psuedo Statie RAM | |
6 | HM6-6617B883 |
Intersil Corporation |
2K x 8 CMOS PROM | |
7 | HM6-6642-9 |
Intersil Corporation |
512 x 8 CMOS PROM | |
8 | HM6-6642B-9 |
Intersil Corporation |
512 x 8 CMOS PROM | |
9 | HM60 |
RCD |
PRECISION METAL FILM RESISTORS | |
10 | HM60N03 |
H&M Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
11 | HM6100 |
H&M Semiconductor |
Ultra Low Power Battery Monitor | |
12 | HM6116 |
Hitachi Semiconductor |
2048-word X 8bit High Speed CMOS Static RAM |