Symbol A0 to A16 I/O0 to I/O7 RFSH CE OE WE CS VCC VSS Pin name Address inputs Data input/output Refresh Chip enable Output enable Write enable Chip select Power supply Ground 3 HM658128A Series Block Diagram A0 Address latch control Row decoder Memory matrix (512 × 256) × 8 A8 I/O 0 www.DataSheet4U.com I/O 7 Input data control Column I/O Column dec.
• Single 5 V (± 10%)
• High speed — Access time CE Access time: 80/100/120 ns — Cycle time Random read/ Write cycle time: 130/160/190 ns
• Low power: — Active: 300 mW (typ) — Standby: 350 µW (typ) (LL-version) 500 µW (typ) (L-version)
• All inputs and outputs TTL compatible
• Non multiplexed address
• 512 refresh cycles (8 ms)
• Refresh functions — Address refresh — Automatic refresh — Self refresh
8 mm × 20 mm 32-pin plastic TSOP reverse type (TFP-32DR)
HM658128A Series
Pin Arrangement
HM658128ALP/ALFP Series
RFSH A16 A14 A12 A7 A6 A5 A4 A3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HM658512A |
Hitachi Semiconductor |
4 M PSRAM (512-kword x 8-bit) 2 k Refresh | |
2 | HM65 |
RCD |
PRECISION METAL FILM RESISTORS | |
3 | HM65 |
TT |
High Current Low Profile Surface Mount Inductors | |
4 | HM65161 |
MHS |
2K X 8 General Purpose CMOS SRAM | |
5 | HM65256B |
Hitachi |
32768 word x 8 Bit High Speed Psuedo Statie RAM | |
6 | HM6-6617B883 |
Intersil Corporation |
2K x 8 CMOS PROM | |
7 | HM6-6642-9 |
Intersil Corporation |
512 x 8 CMOS PROM | |
8 | HM6-6642B-9 |
Intersil Corporation |
512 x 8 CMOS PROM | |
9 | HM60 |
RCD |
PRECISION METAL FILM RESISTORS | |
10 | HM60N03 |
H&M Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
11 | HM6100 |
H&M Semiconductor |
Ultra Low Power Battery Monitor | |
12 | HM6116 |
Hitachi Semiconductor |
2048-word X 8bit High Speed CMOS Static RAM |