The +01. uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =100V,ID =17A RDS(ON) < 70mΩ @ VGS=10V (Typ:56mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformit.
● VDS =100V,ID =17A RDS(ON) < 70mΩ @ VGS=10V (Typ:56mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Schematic diagram
+01.
Application
● Power switching application
● Hard switched and high frequency circuits
Marking and pin assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
+01.
+01.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HM17CM256 |
Hynix Semiconductor |
128XRGBX82 OUTPUT LCD DRIVER IC with built-in RAM | |
2 | HM17E11-A00 |
BOE |
TFT-LCD | |
3 | HM1-6504883 |
Intersil Corporation |
4096 x 1 CMOS RAM | |
4 | HM1-6504B883 |
Intersil Corporation |
4096 x 1 CMOS RAM | |
5 | HM1-6508883 |
Intersil Corporation |
1024 x 1 CMOS RAM | |
6 | HM1-6508B883 |
Intersil Corporation |
1024 x 1 CMOS RAM | |
7 | HM1-6514-9 |
Intersil Corporation |
1024 x 4 CMOS RAM | |
8 | HM1-6514B-9 |
Intersil Corporation |
1024 x 4 CMOS RAM | |
9 | HM1-6514S-9 |
Intersil Corporation |
1024 x 4 CMOS RAM | |
10 | HM1-6516-9 |
Intersil Corporation |
2K x 8 CMOS RAM | |
11 | HM1-65161 |
MHS |
2K X 8 General Purpose CMOS SRAM | |
12 | HM1-65162-9 |
Intersil Corporation |
2K x 8 Asynchronous CMOS Static RAM |