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HM17N10K - H&M semi

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HM17N10K N-Channel Power MOSFET

The +01. uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =100V,ID =17A RDS(ON) < 70mΩ @ VGS=10V (Typ:56mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformit.

Features


● VDS =100V,ID =17A RDS(ON) < 70mΩ @ VGS=10V (Typ:56mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Schematic diagram +01. Application
● Power switching application
● Hard switched and high frequency circuits Marking and pin assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Package +01. +01.

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