Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low power operation. On-chip latches are provided for addresses allowing efficient interfacing with microprocessor systems. The data output can be forced to a high impedance state for use in.
• Low Power Standby . . . . . . . . . . . . . . . . . . . 125µW Max
• Low Power Operation . . . . . . . . . . . . . 35mW/MHz Max
• Data Retention . . . . . . . . . . . . . . . . . . . . . . . at 2.0V Min
• TTL Compatible Input/Output
• Common Data Input/Output
• Three-State Output
• Standard JEDEC Pinout
• Fast Access Time. . . . . . . . . . . . . . . . . . 120/200ns Max
• 18 Pin Package for High Density
• On-Chip Address Register
• Gated Inputs - No Pull Up or Pull Down Resistors Required
Ordering Information
120ns HM3-6514S-9 HM1-6514S-9 24502BVA 8102402VA 200ns HM3-6514B-9 HM1-6514B-9 8102.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HM1-6514-9 |
Intersil Corporation |
1024 x 4 CMOS RAM |
|
| 2 | HM1-6514S-9 |
Intersil Corporation |
1024 x 4 CMOS RAM |
|
| 3 | HM1-6516-9 |
Intersil Corporation |
2K x 8 CMOS RAM |
|
| 4 | HM1-65161 |
MHS |
2K X 8 General Purpose CMOS SRAM |
|
| 5 | HM1-65162-9 |
Intersil Corporation |
2K x 8 Asynchronous CMOS Static RAM |
|
| 6 | HM1-65162B-9 |
Intersil Corporation |
2K x 8 Asynchronous CMOS Static RAM |
|
| 7 | HM1-65162C-9 |
Intersil Corporation |
2K x 8 Asynchronous CMOS Static RAM |
|
| 8 | HM1-6516B-9 |
Intersil Corporation |
2K x 8 CMOS RAM |
|
| 9 | HM1-6518883 |
Intersil Corporation |
1024 x 1 CMOS RAM |
|
| 10 | HM1-6504883 |
Intersil Corporation |
4096 x 1 CMOS RAM |
|
| 11 | HM1-6504B883 |
Intersil Corporation |
4096 x 1 CMOS RAM |
|
| 12 | HM1-6508883 |
Intersil Corporation |
1024 x 1 CMOS RAM |
|