The HM-6561/883 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. On-chip latches are provided for address and data outputs allowing efficient interfacing with microprocessor systems. The data output buffers can be forced t.
• This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1.
• Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max
• Low Power Operation . . . . . . . . . . . . . 20mW/MHz Max
• Fast Access Time. . . . . . . . . . . . . . . . . . . . . . 200ns Max
• Data Retention . . . . . . . . . . . . . . . . . . . . . . . .at 2.0V Min
• TTL Compatible Input/Output
• High Output Drive - 1 TTL Load
• On-Chip Address Registers
• Common Data In/Out
• Three-State Output
• Easy Microprocessor Interfacing
Ordering Information
PACKAGE TEMP.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HM1-6561B883 |
Intersil Corporation |
256 x 4 CMOS RAM | |
2 | HM1-65642883 |
Intersil Corporation |
8K x 8 Asynchronous CMOS Static RAM | |
3 | HM1-65642B883 |
Intersil Corporation |
8K x 8 Asynchronous CMOS Static RAM | |
4 | HM1-65642C883 |
Intersil Corporation |
8K x 8 Asynchronous CMOS Static RAM | |
5 | HM1-6504883 |
Intersil Corporation |
4096 x 1 CMOS RAM | |
6 | HM1-6504B883 |
Intersil Corporation |
4096 x 1 CMOS RAM | |
7 | HM1-6508883 |
Intersil Corporation |
1024 x 1 CMOS RAM | |
8 | HM1-6508B883 |
Intersil Corporation |
1024 x 1 CMOS RAM | |
9 | HM1-6514-9 |
Intersil Corporation |
1024 x 4 CMOS RAM | |
10 | HM1-6514B-9 |
Intersil Corporation |
1024 x 4 CMOS RAM | |
11 | HM1-6514S-9 |
Intersil Corporation |
1024 x 4 CMOS RAM | |
12 | HM1-6516-9 |
Intersil Corporation |
2K x 8 CMOS RAM |