Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
The HM-6518/883 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. On chip latches are provided for address and data outputs allowing efficient interfacing with microprocessor systems. The data output buffers can be forced .
• This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1.
• Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max
• Low Power Operation . . . . . . . . . . . . . 20mW/MHz Max
• Fast Access Time. . . . . . . . . . . . . . . . . . . . . . 180ns Max
• Data Retention . . . . . . . . . . . . . . . . . . . . . . . .at 2.0V Min
• TTL Compatible Input/Output
• High Output Drive - 2 TTL Loads
• High Noise Immunity
• On-Chip Address Register
• Two-Chip Selects for Easy Array Expansion
• Three-State Output
Ordering Information
P.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HM1-6514-9 |
Intersil Corporation |
1024 x 4 CMOS RAM |
|
| 2 | HM1-6514B-9 |
Intersil Corporation |
1024 x 4 CMOS RAM |
|
| 3 | HM1-6514S-9 |
Intersil Corporation |
1024 x 4 CMOS RAM |
|
| 4 | HM1-6516-9 |
Intersil Corporation |
2K x 8 CMOS RAM |
|
| 5 | HM1-65161 |
MHS |
2K X 8 General Purpose CMOS SRAM |
|
| 6 | HM1-65162-9 |
Intersil Corporation |
2K x 8 Asynchronous CMOS Static RAM |
|
| 7 | HM1-65162B-9 |
Intersil Corporation |
2K x 8 Asynchronous CMOS Static RAM |
|
| 8 | HM1-65162C-9 |
Intersil Corporation |
2K x 8 Asynchronous CMOS Static RAM |
|
| 9 | HM1-6516B-9 |
Intersil Corporation |
2K x 8 CMOS RAM |
|
| 10 | HM1-6504883 |
Intersil Corporation |
4096 x 1 CMOS RAM |
|
| 11 | HM1-6504B883 |
Intersil Corporation |
4096 x 1 CMOS RAM |
|
| 12 | HM1-6508883 |
Intersil Corporation |
1024 x 1 CMOS RAM |
|