HITK0204MP - Renesas

HITK0204MP Silicon N Channel MOS FET Power Switching

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Features

 Low on-resistance RDS(on) = 100 m typ (VGS = 4.5 V, ID = 1.2 A)
 Low drive current
 High speed switching
 2.5 V gate drive R07DS0482EJ0100 Rev.1.00 Jun 22, 2011 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 2 1 2 S 1 G 1. Source 2. Gate 3. Drain Note: Marking is “TG”. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) Note1 IDR Pch Note2 Tch Tstg Ratings 20 1.