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Low on-resistance RDS(on) = 42 m typ (VGS = 4.5 V, ID = 1.9 A)
Low drive current
High speed switching
2.5 V gate drive R07DS0480EJ0200 Rev.2.00 May 09, 2013
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
3 D 3 2 1 2 S 1
G
1. Source 2. Gate 3. Drain
Note:
Marking is “RV”.
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) Note1 IDR Pch Note2 Tch Tstg Ratings 20 12.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HITK0201MP |
Renesas |
Silicon N Channel MOS FET Power Switching | |
2 | HITK0203MP |
Renesas |
Silicon N Channel MOS FET Power Switching | |
3 | HITK0204MP |
Renesas |
Silicon N Channel MOS FET Power Switching | |
4 | HITK0302MP |
Renesas |
Silicon N Channel MOS FET Power Switching | |
5 | HITK0303MP |
Renesas |
Silicon N Channel MOS FET Power Switching | |
6 | HIT1213 |
Renesas Technology |
Silicon NPN Transistor | |
7 | HIT468 |
Renesas Technology |
Silicon NPN Epitaxial | |
8 | HIT5609 |
ETC |
NPN Transistor | |
9 | HIT5610 |
ETC |
PNP SIlicon Transistor | |
10 | HIT562 |
Renesas Technology |
Silicon PNP Epitaxial | |
11 | HIT647 |
Renesas Technology |
Silicon PNP Epitaxial | |
12 | HIT667 |
Renesas Technology |
Silicon NPN Epitaxial |