HGTP14N41G3VLS - Fairchild Semiconductor

HGTP14N41G3VLS N-Channel IGBT

HGT1S14N41G3VLS, HGTP14N41G3VL Data Sheet December 2001 14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self.

Features

include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resister are provided in the gate circuit Formerly Developmental Type TA49360. Features
• Ignition Energy = 340mJ at TJ (STARTING) = 25oC
• Typical Internal Clamp Voltage = 410V at TJ = 25oC
• Logic Level Gate Drive
• ESD Gate Protection
• TJ = 175oC
• Internal Series and Shunt Gate Resistors
• 24V Reverse Battery Capability
• Related Literat.