HGTD7N60B3S - Intersil Corporation

HGTD7N60B3S 14A/ 600V/ UFS Series N-Channel IGBTs

HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Data Sheet January 2000 File Number 4412.2 14A, 600V, UFS Series N-Channel IGBTs The HGTD7N60B3S, HGT1S7N60B3S and HGTP7N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conductio.

Features

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49190. Features
• 14A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time..