HGTD10N50F1S - Intersil Corporation

HGTD10N50F1S 10A/ 400V and 500V N-Channel IGBTs

The HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, and HGTD10N50F1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low power integrated circuits. PACKAGING AVAILABILITY PART NUMBER HGTD10N40F.

Features

• 10A, 400V and 500V
• VCE(ON) 2.5V Max.
• TFALL ≤1.4µs
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance Applications
• Power Supplies
• Motor Drives
• Protective Circuits COLLECTOR (FLANGE) GATE EMITTER HGTD10N40F1S, HGTD10N50F1S JEDEC TO-252AA Description The HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, and HGTD10N50F1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low power integrated circuits. PAC.