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Guaranteed (min, max) Test Conditions VF Forward Voltage Drop BVR Reverse Breakdown Voltage IRM Reverse Leakage Current 0.8V min, 1.05V max 600V min 10µA max IC = 1A, TJ = 25°C TJ = 25°C, IR = 1mA TJ = 25°C, VR = 600V Mechanical Data Nominal Backmetal Composition, (Thickness) Cr (0.1µm)- NiV (0.2µm) - Ag (0.25µm) Nominal Front Metal Composition, (Th.
GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benefits Benchmark Efficiency for Motor Control Applications Rugged Transient Performance Low EMI Excellent Current Sharing in Parallel Operation Qualified for Industrial Market Hexfred Die in Wafer Form 600V IF(nom)=5A VF(typ)= 1.15V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 150mm Wafer Reference Standard IR Package Part: IRGS10B60KD Parameter Electrical Characteristics (Wafer Form) Description Guaranteed (min, max) Test Conditions VF Forward Voltage Drop BVR Reverse Breakdown Voltage IRM R.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HF-102 |
Sirenza Microdevices |
Wideband RF/Pulse Transformer |
|
| 2 | HF-110 |
Sirenza Microdevices |
(HF-110 / HF-122) Wideband RF/Pulse Transformer |
|
| 3 | HF-112 |
Sirenza Microdevices |
Wideband RF/Pulse Transformer |
|
| 4 | HF-118 |
Sirenza Microdevices |
Wideband RF/Pulse Transformer |
|
| 5 | HF-122 |
Sirenza Microdevices |
(HF-110 / HF-122) Wideband RF/Pulse Transformer |
|
| 6 | HF-128 |
Sirenza Microdevices |
(HF-128 / HF-132) Wideband RF/Pulse Transformer |
|
| 7 | HF-130 |
Sirenza Microdevices |
Wideband RF/Pulse Transformer |
|
| 8 | HF-132 |
Sirenza Microdevices |
(HF-128 / HF-132) Wideband RF/Pulse Transformer |
|
| 9 | HF-84023 |
Wit Chip |
10/100 BASE-TX Quad Port Surface Mount Magnetics |
|
| 10 | HF-LPT100 |
High-Flying Electronics |
Low Power WiFi Module User Manual |
|
| 11 | HF10-12F |
Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR |
|
| 12 | HF10-12S |
Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR |
|