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HCU7N70S HCU7N70S 700V N-Channel Super Junction MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.95 ȍ 7S #9GS=10V 100% Avalanche T.
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.95 ȍ 7S #9GS=10V 100% Avalanche Tested
Sep 2014
BVDSS = 700 V RDS(on) typ = 0.95 ȍ ID = 5.0 A
I-PAK
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID IDM VGS
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuou.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HCU70R1K4P |
SemiHow |
700V N-Channel Super Junction MOSFET |
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| 2 | HCU70R1K5E |
SemiHow |
700V N-Channel Super Junction MOSFET |
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| 3 | HCU70R600S |
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700V N-Channel Super Junction MOSFET |
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| 4 | HCU70R700T |
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700V N-Channel Super Junction MOSFET |
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| 5 | HCU70R950T |
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700V N-Channel Super Junction MOSFET |
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| 6 | HCU65R360S |
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650V N-Channel Super Junction MOSFET |
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| 7 | HCU65R600S |
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650V N-Channel Super Junction MOSFET |
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| 8 | HCU65R660S |
SemiHow |
650V N-Channel Super Junction MOSFET |
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| 9 | HCU6N70S |
SemiHow |
700V N-Channel Super Junction MOSFET |
|
| 10 | HC-035-1150 |
Talema |
High Current Inductors |
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| 11 | HC-05 |
ITead |
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| 12 | HC-05 |
ETC |
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|