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HCD70R600S_HCU70R600S June 2015 HCD70R600S / HCU70R600S 700V N-Channel Super Junction MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) .
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested BVDSS = 700 V RDS(on) typ = 0.54 ȍ ID = 7.3 A D-PAK I-PAK 2 1 1 32 3 HCD70R600S HCU70R600S 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain C.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HCU70R1K4P |
SemiHow |
700V N-Channel Super Junction MOSFET |
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| 2 | HCU70R1K5E |
SemiHow |
700V N-Channel Super Junction MOSFET |
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| 3 | HCU70R700T |
SemiHow |
700V N-Channel Super Junction MOSFET |
|
| 4 | HCU70R950T |
SemiHow |
700V N-Channel Super Junction MOSFET |
|
| 5 | HCU7N70S |
SemiHow |
N-Channel MOSFET |
|
| 6 | HCU65R360S |
SemiHow |
650V N-Channel Super Junction MOSFET |
|
| 7 | HCU65R600S |
SemiHow |
650V N-Channel Super Junction MOSFET |
|
| 8 | HCU65R660S |
SemiHow |
650V N-Channel Super Junction MOSFET |
|
| 9 | HCU6N70S |
SemiHow |
700V N-Channel Super Junction MOSFET |
|
| 10 | HC-035-1150 |
Talema |
High Current Inductors |
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| 11 | HC-05 |
ITead |
Bluetooth to Serial Port Module |
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| 12 | HC-05 |
ETC |
Bluetooth Module User Manual |
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