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HCS55R140E Super Junction MOSFET April 2016 HCS55R140E 550V N-Channel Super Junction MOSFET Features Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 600 23 0.14 22 Unit V A ȍ nC Application Lighting Hard Sw.
Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested
Key Parameters
Parameter BVDSS @Tj,max
ID RDS(on), max
Qg, Typ
Value 600 23 0.14 22
Unit V A ȍ nC
Application
Lighting Hard Switching PWM Server Power Supply Charger
Package & Internal Circuit
TO-220F
G D S
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS VGS
ID
IDM EAS dv/dt dv/dt PD TJ, TSTG
TL
Drain-Source Voltage
Gate-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous.
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|---|---|---|---|---|
| 1 | HCS500 |
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| 2 | HCS50R150V |
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| 4 | HCS515 |
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