HBT169M Silicon Controlled Rectifiers Datasheet

HBT169M Silicon Controlled Rectifiers

SMD Type Silicon Controlled Rectifiers HBT169M Thyristor Features Repetitive peak off-state voltages :400V Average on-state current :0.5A RMS on-state current :0.8A Non-repetitive peak on-state current :8A Absolute Maximum Ratings Ta = 25 Parameter Peak Repetitive Forward and Reverse Blocking Voltage* Forward Current RMS Non-repetitive peak on-state curr.

Features

Repetitive peak off-state voltages :400V Average on-state current :0.5A RMS on-state current :0.8A Non-repetitive peak on-state current :8A Absolute Maximum Ratings Ta = 25 Parameter Peak Repetitive Forward and Reverse Blocking Voltage
* Forward Current RMS Non-repetitive peak on-state current (t=10ms) Non-repetitive peak on-state current (t=8.3ms) Circuit Fusing Considerations (t = 10ms) Repetitive rate of rise of on-state current after triggering
*1 Peak gate current Peak Gate Power Forward, TA = 25 Average Gate Power Forward, TA = 25 Peak Gate Current Forward, TA = 25 Peak gate voltage Peak.

The same part from a different manufacturer

HBT169M - Hi-Sincerity Mocroelectronics

Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and pha.

HBT169M - KERSEMI

Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and pha.

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