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HBT169M |
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| Part Number | HBT169M |
| Manufacturer | Hi-Sincerity Mocroelectronics |
| Description | Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to... |
| Features |
Non-repetitive peak on-state current (t=10ms) Non-repetitive peak on-state current (t=8.3ms) I2t for fusing (t=10ms) Repetitive rate of rise of on-state current after triggering (ITM=2A; IG=10mA; dIG/dt=100mA/us) Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power (over any 20ms period) Storage temperature Operating junction temperature
Min. Max. Units - 400 V - 0.5 A - 0.8 A - 8A - 9A - 0.32 A2S
- 50 A/us
- 1A - 5V
5V - 2W - 0.1 W - 150 °C - 125 °C
HBT169M
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HM200105 Iss... |
| Document |
 HBT169M Data Sheet
PDF 47.20KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HBT169M |
KERSEMI |
THYRISTORS |
|
| 2 | HBT169M |
Kexin |
Silicon Controlled Rectifiers |
|
| 3 | HBT136AE |
Hi-Sincerity Mocroelectronics |
TRIAC |
|
| 4 | HBT137F-600 |
SHANTOU HUASHAN |
INSULATED TYPE TRIAC |
|
| 5 | HBT138F-600 |
SHANTOU HUASHAN |
INSULATED TYPE TRIAC |
|