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The HBC558 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. Absolute Maximum Ratings TO-92 • Maximum Temperatures Storage Temperature... -55 ~ +150 °C Junction Te.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HBC556 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR |
|
| 2 | HBC557 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR |
|
| 3 | HBC517 |
HI-SINCERITY |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 4 | HBC546 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 5 | HBC547 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 6 | HBC548 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 7 | HBC114ES6R |
CYStech Electronics |
Dual NPN Digital Transistor |
|
| 8 | HBC114TS6R |
CYStech Electronics |
Dual NPN Digital Transistor |
|
| 9 | HBC114YC6 |
CYStech Electronics |
Dual NPN Digital Transistors |
|
| 10 | HBC114YS5 |
CYStech Electronics |
Dual NPN Digital Transistors |
|
| 11 | HBC114YS6R |
CYStech Electronics |
Dual NPN Digital Transistor |
|
| 12 | HBC123ES6R |
CYStech Electronics |
Dual NPN Digital Transistor |
|