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The HBC557 is designed for use in driver stage of audio amplifier applications. Features • High Breakdown Voltage: 45V • High AC Current Gain: 75-800 at IC=2mA TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ....
• High Breakdown Voltage: 45V
• High AC Current Gain: 75-800 at IC=2mA
TO-92
Absolute Maximum Ratings
• Maximum Temperatures Storage Temperature .... -55 ~ +150 °C Junction Temperature ... +150 °C Maximum
• Maximum Power Dissipation Total Power Dissipation (TA=25°C) ...
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HBC556 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR |
|
| 2 | HBC558 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR |
|
| 3 | HBC517 |
HI-SINCERITY |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 4 | HBC546 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 5 | HBC547 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 6 | HBC548 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 7 | HBC114ES6R |
CYStech Electronics |
Dual NPN Digital Transistor |
|
| 8 | HBC114TS6R |
CYStech Electronics |
Dual NPN Digital Transistor |
|
| 9 | HBC114YC6 |
CYStech Electronics |
Dual NPN Digital Transistors |
|
| 10 | HBC114YS5 |
CYStech Electronics |
Dual NPN Digital Transistors |
|
| 11 | HBC114YS6R |
CYStech Electronics |
Dual NPN Digital Transistor |
|
| 12 | HBC123ES6R |
CYStech Electronics |
Dual NPN Digital Transistor |
|