HAT3008RJ - Hitachi Semiconductor

HAT3008RJ Silicon N/P Channel Power MOSFET

HAT3008R/HAT3008RJ Silicon N/P Channel Power MOS FET High Speed Power Switching ADE-208-536B (Z) 3rd. Edition February 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting Outline SOP–8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Dra.

Features

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• For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting Outline SOP
  –8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain Nch Pch HAT3008R/HAT3008RJ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Nch Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current HAT3008R HAT3008RJ Avalanche energy HAT3008R HAT3008RJ Channel dissipation Channel dissipation Channel temperature Storage temperature Note: 1..