GWA75H65DRFB2AG - STMicroelectronics

GWA75H65DRFB2AG Automotive-grade trench gate field-stop IGBT

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performances are optimized both in conduction and switching energies for hard switching application. In this configuration, it has been co-packed with a high ruggedness rectifier diode targeting heavy duty and high reliability automotiv.

Features

TO-247 long leads C(2, TAB) G(1) E(3) NG1E3C2T
• AEC-Q101 qualified
• Maximum junction temperature: TJ = 175 °C
• Low VCE(sat) = 1.6 V (typ.) @ IC = 75 A
• Co-packed with high ruggedness rectifier diode
• Minimized tail current
• Tight parameter distribution
• Low thermal resistance
• Positive VCE(sat) temperature coefficient Applications
• DC/DC converter for EV/HEV
• On board charger (OBC) Description The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performances are optimized both in conduction and swit.