The GTVA355001EC and GTVA355001FC are 500-watt GaN on SiC high electron mobility transistors (HEMTs) for use in the 2900 to 3500 MHz frequecy band. They feature input and output matching, high efficiency, and a thermally-enhanced packages. GTVA355001EC Package H-36248-2 Features • GaN on SiC HEMT technology • Broadband internal input and output matching • .
• GaN on SiC HEMT technology
• Broadband internal input and output matching
• Typical pulsed CW performance (class AB), 3500 MHz, 50 V, 300 µs pulse width, 10% duty cycle - Output power at P3dB = 500 W - Drain efficiency = 65% - Gain = 13 dB
• Pb-free and RoHS compliant
GTVA355001FC Package H-37248-2
Target RF Characteristics
Pulsed CW Specifications (tested in Wolfspeed class AB test fixture) VDD = 50 V, IDQ = 200 mA, POUT = 500 W, ƒ = 3500 MHz, pulse width = 300 µs, duty cycle = 10%
Characteristic Gain Drain Efficiency
Symbol
Min Typ
Max
Unit
Gps
—
13
—
dB
hD
—
65
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GTVA355001EC |
Wolfspeed |
Thermally-Enhanced High Power RF GaN on SiC HEMT | |
2 | GTVA104001FA |
Wolfspeed |
High Power RF GaN | |
3 | GTVA107001EC |
Wolfspeed |
High Power RF GaN | |
4 | GTVA107001FC |
Wolfspeed |
High Power RF GaN | |
5 | GTVA123501FA |
Wolfspeed |
Thermally-Enhanced High Power RF GaN | |
6 | GTVA126001EC |
MACOM |
600W High Power RF GaN HEMT | |
7 | GTVA126001EC |
Wolfspeed |
Thermally-Enhanced High Power RF GaN HEMT | |
8 | GTVA126001FC |
Wolfspeed |
Thermally-Enhanced High Power RF GaN HEMT | |
9 | GTVA126001FC |
MACOM |
600W High Power RF GaN HEMT | |
10 | GTVA212701FA |
MACOM |
Thermally-Enhanced High Power RF GaN on SiC HEMT | |
11 | GTVA220701FA |
Infineon |
Thermally-Enhanced High Power RF GaN HEMT | |
12 | GTVA221701FA |
Infineon |
Thermally-Enhanced High Power RF GaN HEMT |