GTVA355001EC - Wolfspeed

GTVA355001EC Thermally-Enhanced High Power RF GaN on SiC HEMT

The GTVA355001EC and GTVA355001FC are 500-watt GaN on SiC high electron mobility transistors (HEMTs) for use in the 2900 to 3500 MHz frequecy band. They feature input and output matching, high efficiency, and a thermally-enhanced packages. GTVA355001EC Package H-36248-2 Features • GaN on SiC HEMT technology • Broadband internal input and output matching • .

Features

• GaN on SiC HEMT technology
• Broadband internal input and output matching
• Typical pulsed CW performance (class AB), 3500 MHz, 50 V, 300 µs pulse width, 10% duty cycle - Output power at P3dB = 500 W - Drain efficiency = 65% - Gain = 13 dB
• Pb-free and RoHS compliant GTVA355001FC Package H-37248-2 Target RF Characteristics Pulsed CW Specifications (tested in Wolfspeed class AB test fixture) VDD = 50 V, IDQ = 200 mA, POUT = 500 W, ƒ = 3500 MHz, pulse width = 300 µs, duty cycle = 10% Characteristic Gain Drain Efficiency Symbol Min Typ Max Unit Gps — 13 — dB hD — 65 .