GSMDC3960X - Globaltech

GSMDC3960X N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching.

Features

„ 30V, 115A, RDS(ON)=2.4mΩ@VGS=10V „ Improved dv/dt capability „ Fast switching „ 100% EAS guaranteed „ Green Device Available „ DFN5X6-8L package design Applications „ MB / VGA / Vcore „ POL Applications „ SMPS 2nd SR Packages & Pin Assignments GSMDC3960XFF (DFN5X6-8L) GSMDC3960X Bottom View Pin Description 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain www.gs-power.com 1 Ordering Information GS P/N GSMDC3960X F F Package Code Pb Free Code Part Number GSMDC3960XFF Package DFN5X6-8L Marking Information Absolute Maxim.