GSMBSS139 - Globaltech

GSMBSS139 N-Channel MOSFET

These N-Channel Enhancement Mode Power Field Effect Transistors are Using Trench DMOS Technology. This Advanced Technology has been Especially Tailored to Minimize on-state Resistance, Provide Superior Switching Performance, and Withstand high Energy Pulse in the Avalanche and Commutation mode. These Devices are well Suited for High Efficiency Fast Switching.

Features

 50V, 0.2A, RDS(ON)=3.5Ω@VGS=5V
 Improved dv/dt Capability
 Fast Switching
 Low Threshold Voltage(VGS(th)：0.5…1.5V) Makes It Ideal for Low Voltage Application
 100% EAS Guaranteed
 Green Device Available
 SOT-23 Package Design Applications
 Notebook
 Load Switch
 LED Applications Top Views Pin Description 1 Gate 2 Source 3 Drain Ordering Information GSMBSS139 www.gs-power.com 1 Marking Information Part Number GSMBSS139JZF Package SOT-23 Part Marking J2YWMM Quantity.