GSMBSS123 - Globaltech

GSMBSS123 N-Channel MOSFET

The GSMBSS123 is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. Features „ 100V, 0.17A, RDS(ON)=6.0Ω@VGS=10V „ SOT-23 package design „ Lead(Pb)-Free Applications „ DC.

Features

„ 100V, 0.17A, RDS(ON)=6.0Ω@VGS=10V „ SOT-23 package design „ Lead(Pb)-Free Applications „ DC to DC Converter „ Cellular & PCMCIA Card „ Cordless Telephone „ Power Management in Portable and Battery etc. Packages & Pin Assignments GSMBSS123JZF (SOT-23) GSMBSS123 Pin Description 1 Gate 2 Source 3 Drain Ordering Information GS P/N GSMBSS123 JZ F Package Code Pb Free Code Part Number GSMBSS123JZF Package SOT-23 Quantity 3000 PCS www.gs-power.com 1 Marking Information Part Number GSMBSS123JZF Package SOT-23 Part Marking SAT Absolute Maximum Ratings (TA=25ºC Unless otherwise noted) .