GS82612DT19LE - GSI Technology

GS82612DT19LE Rad-Hard SRAM

GS82612DT19/37CE/LE-350M/250M (S/Q/V) GS81332DT19/37CE/LE-350M/250M (S/Q/V) GS8692DT19/37CE/LE-350M/250M (S/Q/V) 165-Bump CCGA & LGA Rad-Hard SRAM Military Temp 288Mb/144Mb/72Mb Burst of 4 SigmaQuad-II+TM 350 MHz–250 MHz 1.8 V VDD 1.8 V and 1.5 V I/O Features • Aerospace-Level Product • 2.0 clock Latency with DLL on • 1.0 clock Latency with DLL off • O.

Features

• Aerospace-Level Product
• 2.0 clock Latency with DLL on
• 1.0 clock Latency with DLL off
• Optional DLL-controlled output timing
• Can be operated with DLL on or off
• Simultaneous Read and Write SigmaQuad™ Interface
• JEDEC-standard pinout and package
• Dual Double Data Rate interface
• Byte Write controls sampled at data-in time
• Burst of 4 Read and Write
• Dual-Range On-Die Termination (ODT) on Data (D), Byte Write (BW), and Clock (K, K) inputs
• 1.8 V +100/
  –100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation
• Fully coherent read and write pipelines
• ZQ .