GS82612DT19/37CE/LE-350M/250M (S/Q/V) GS81332DT19/37CE/LE-350M/250M (S/Q/V) GS8692DT19/37CE/LE-350M/250M (S/Q/V) 165-Bump CCGA & LGA Rad-Hard SRAM Military Temp 288Mb/144Mb/72Mb Burst of 4 SigmaQuad-II+TM 350 MHz–250 MHz 1.8 V VDD 1.8 V and 1.5 V I/O Features • Aerospace-Level Product • 2.0 clock Latency with DLL on • 1.0 clock Latency with DLL off • O.
• Aerospace-Level Product
• 2.0 clock Latency with DLL on
• 1.0 clock Latency with DLL off
• Optional DLL-controlled output timing
• Can be operated with DLL on or off
• Simultaneous Read and Write SigmaQuad™ Interface
• JEDEC-standard pinout and package
• Dual Double Data Rate interface
• Byte Write controls sampled at data-in time
• Burst of 4 Read and Write
• Dual-Range On-Die Termination (ODT) on Data (D), Byte
Write (BW), and Clock (K, K) inputs
• 1.8 V +100/
–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation
• Fully coherent read and write pipelines
• ZQ .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GS82612DT19 |
GSI Technology |
Rad-Hard SRAM | |
2 | GS82612DT19LE |
GSI Technology |
Rad-Hard SRAM | |
3 | GS82612DT37 |
GSI Technology |
Rad-Hard SRAM | |
4 | GS82612DT37CE |
GSI Technology |
Rad-Hard SRAM | |
5 | GS82612DT37LE |
GSI Technology |
Rad-Hard SRAM | |
6 | GS82032AT |
GSI Technology |
2Mb Synchronous Burst SRAM | |
7 | GS8206 |
Genesis |
3-channel constant current LED driver | |
8 | GS820E32A |
GSI Technology |
64K x 32 / 2M Synchronous Burst SRAM | |
9 | GS820E32T |
GSI Technology |
64K x 32 / 2M Synchronous Burst SRAM | |
10 | GS8256418GB-200 |
GSI Technology |
288Mb DCD Sync Burst SRAM | |
11 | GS8256418GB-250 |
GSI Technology |
288Mb DCD Sync Burst SRAM | |
12 | GS8256418GB-333 |
GSI Technology |
288Mb DCD Sync Burst SRAM |