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The GS66516B is an enhancement mode GaN on silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging. Island Technology® cell layout realizes high-current die and high yield. GaNP.
• 650 V enhancement mode power transistor
• Bottom-side cooled configuration
• RDS(on) = 25 mΩ
• IDS(max) = 60 A
• Ultra-low FOM die
• Low inductance GaNPX® package
• Simple drive requirements (0 V to 6 V)
• Transient tolerant gate drive (-20 V / +10 V)
• Very high switching frequency (> 10 MHz)
• Fast and controllable fall and rise times
• Reverse current capability
• Zero reverse recovery loss
• Small 11 x 9 mm2 PCB footprint
• Source Sense (SS) pins for optimized gate drive
• Dual Gate Pins for optimal paralleling
• RoHS 3 (6 + 4) compliant
Package Outline
Circuit Symbol
Applications
• A.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | GS66516T |
GaN Systems |
Top cooled 650V enhancement mode GaN transistor |
|
| 2 | GS66502B |
GaN Systems |
650V enhancement mode GaN transistor |
|
| 3 | GS66504B |
GaN Systems |
650V enhancement mode GaN transistor |
|
| 4 | GS66506T |
GaN Systems |
Top cooled 650V enhancement mode GaN transistor |
|
| 5 | GS66508B |
GaN Systems |
Bottom-side cooled 650V E-mode GaN transistor |
|
| 6 | GS66508P |
GaN Systems |
Bottom-side cooled 650V E-mode GaN transistor |
|
| 7 | GS66508T |
GaN Systems |
Top cooled 650V enhancement mode GaN transistor |
|
| 8 | GS6042 |
Semtech |
6G UHD-SDI/3G/HD/SD Adaptive Cable Equalizer |
|
| 9 | GS6100 |
GSM |
1A power tube built-in LED constant current driver |
|
| 10 | GS61004B |
GaN Systems |
100V enhancement mode GaN transistor |
|
| 11 | GS61008P |
GaN Systems |
100V enhancement mode GaN transistor |
|
| 12 | GS61008T |
GaN Systems |
Top-side cooled 100V E-mode GaN transistor |
|