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The GS61008T is an enhancement mode GaN-onsilicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging. Island Technology® cell layout realizes high-current die and high yield. GaNPX.
• 100 V enhancement mode power transistor
• Top-side cooled configuration
• RDS(on) = 7 mΩ
• IDS(max) = 90 A
• Ultra-low FOM die
• Low inductance GaNPX® package
• Simple gate drive requirements (0 V to 6 V)
• Transient tolerant gate drive (-20 V / +10 V)
• Very high switching frequency (> 10 MHz)
• Fast and controllable fall and rise times
• Reverse current capability
• Zero reverse recovery loss
• Small 7.0 x 4.0 mm2 PCB footprint
• Dual gate pads for optimal board layout
• RoHS 3 (6 + 4) compliant
Package Outline
Circuit Symbol
The top-side thermal pad is internally connected to Source (S.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | GS61008P |
GaN Systems |
100V enhancement mode GaN transistor |
|
| 2 | GS6100 |
GSM |
1A power tube built-in LED constant current driver |
|
| 3 | GS61004B |
GaN Systems |
100V enhancement mode GaN transistor |
|
| 4 | GS6150 |
Semtech |
Multi-Rate 6G UHD-SDI Reclocker |
|
| 5 | GS6042 |
Semtech |
6G UHD-SDI/3G/HD/SD Adaptive Cable Equalizer |
|
| 6 | GS62C101 |
GS Technology |
System / Data Controller |
|
| 7 | GS62C102 |
GS Technology |
Memory / Address Controller |
|
| 8 | GS66502B |
GaN Systems |
650V enhancement mode GaN transistor |
|
| 9 | GS66504B |
GaN Systems |
650V enhancement mode GaN transistor |
|
| 10 | GS66506T |
GaN Systems |
Top cooled 650V enhancement mode GaN transistor |
|
| 11 | GS66508B |
GaN Systems |
Bottom-side cooled 650V E-mode GaN transistor |
|
| 12 | GS66508P |
GaN Systems |
Bottom-side cooled 650V E-mode GaN transistor |
|