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The GS-065-030-2-L is an enhancement mode GaNon-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-current die and high yield. The GS-065030-2-L is a bottom-side.
• 650 V enhancement mode power transistor
• 850 V transient drain-to-source voltage
• Bottom-cooled, 8x8 mm PDFN package
• RDS(on) = 50 mΩ
• IDS,max = 30 A / IDSmax,Pulse = 60 A
• Simple gate drive requirements (0 V to 6 V)
• Transient tolerant gate drive (-20 V / +10 V)
• High switching frequency (> 1 MHz)
• Fast and controllable fall and rise times
• Reverse conduction capability
• Zero reverse recovery loss
• Source Sense (SS) pin for optimized gate drive
• RoHS 3 (6+4) compliant
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Applications
• Bridgeless Totem Pole PFC
• Consumer, Industrial and Datacenter High
Densi.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | GS-065-030-6-LL |
GaN Systems |
700V E-mode GaN transistor |
|
| 2 | GS-065-030-6-LR |
GaN Systems |
700V E-mode GaN transistor |
|
| 3 | GS-065-004-1-L |
GaN Systems |
650V E-mode GaN transistor |
|
| 4 | GS-065-004-6-L |
GaN Systems |
700V E-mode GaN transistor |
|
| 5 | GS-065-008-1-L |
GaN Systems |
650V E-mode GaN transistor |
|
| 6 | GS-065-008-6-L |
GaN Systems |
700V E-mode GaN transistor |
|
| 7 | GS-065-011-1-L |
GaN Systems |
650V E-mode GaN transistor |
|
| 8 | GS-065-011-2-L |
GaN Systems |
650V E-mode GaN transistor |
|
| 9 | GS-065-011-6-L |
GaN Systems |
700V E-mode GaN transistor |
|
| 10 | GS-065-011-6-LR |
GaN Systems |
700V E-mode GaN transistor |
|
| 11 | GS-065-014-6-L |
GaN Systems |
700V E-mode GaN transistor |
|
| 12 | GS-065-014-6-LR |
GaN Systems |
700V E-mode GaN transistor |
|