GKI06185 - SANKEN

GKI06185 N Channel Trench Power MOSFET

60 V, 26 A, 11.8 mΩ Low RDS(ON) N ch Trench Power MOSFET GKI06185 Features  V(BR)DSS --------------------------------- 60 V (ID = 100 µA)  ID ---------------------------------------------------------- 26 A  RDS(ON) -------- 16.3 mΩ max. (VGS = 10 V, ID = 15.5 A)  Qg------- 9.1 nC (VGS = 4.5 V, VDS = 30 V, ID = 19.8 A)  Low Total Gate Charge  High Spee.

Features

 V(BR)DSS --------------------------------- 60 V (ID = 100 µA)
 ID ---------------------------------------------------------- 26 A
 RDS(ON) -------- 16.3 mΩ max. (VGS = 10 V, ID = 15.5 A)
 Qg------- 9.1 nC (VGS = 4.5 V, VDS = 30 V, ID = 19.8 A)
 Low Total Gate Charge
 High Speed Switching
 Low On-Resistance
 Capable of 4.5 V Gate Drive
 100 % UIL Tested
 RoHS Compliant Applications
 DC-DC converters
 Synchronous Rectification
 Power Supplies Package DFN 5 × 6 8pin DDDD 8pin DDDD SSSG 1pin GSSS 1pin Not to scale Equivalent circuit D(5)(6)(7)(8) G(4) Absolute Maximum Ratings .