40 V, 26 A, 6.9 mΩ Low RDS(ON) N ch Trench Power MOSFET GKI04076 Features V(BR)DSS --------------------------------- 40 V (ID = 100 µA) ID ---------------------------------------------------------- 26 A RDS(ON) ----------8.9 mΩ max. (VGS = 10 V, ID = 23.3 A) Qg------- 7.9 nC (VGS = 4.5 V, VDS = 20 V, ID = 29.6 A) Low Total Gate Charge High Speed.
V(BR)DSS --------------------------------- 40 V (ID = 100 µA)
ID ---------------------------------------------------------- 26 A
RDS(ON) ----------8.9 mΩ max. (VGS = 10 V, ID = 23.3 A)
Qg------- 7.9 nC (VGS = 4.5 V, VDS = 20 V, ID = 29.6 A)
Low Total Gate Charge
High Speed Switching
Low On-Resistance
Capable of 4.5 V Gate Drive
100 % UIL Tested
RoHS Compliant
Applications
DC-DC converters
Synchronous Rectification
Power Supplies
Package
DFN 5 × 6
8pin DDDD
8pin DDDD
SSSG 1pin
GSSS 1pin
Not to scale
Equivalent circuit
D(5)(6)(7)(8)
G(4)
Absolute Maximum Ratings
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GKI04031 |
SANKEN |
N Channel Trench Power MOSFET | |
2 | GKI04048 |
SANKEN |
N Channel Trench Power MOSFET | |
3 | GKI04101 |
SANKEN |
N Channel Trench Power MOSFET | |
4 | GKI03026 |
SANKEN |
N Channel Trench Power MOSFET | |
5 | GKI03039 |
SANKEN |
N Channel Trench Power MOSFET | |
6 | GKI03061 |
SANKEN |
N Channel Trench Power MOSFET | |
7 | GKI03080 |
SANKEN |
N Channel Trench Power MOSFET | |
8 | GKI06071 |
SANKEN |
N Channel Trench Power MOSFET | |
9 | GKI06109 |
SANKEN |
N Channel Trench Power MOSFET | |
10 | GKI06185 |
SANKEN |
N Channel Trench Power MOSFET | |
11 | GKI06259 |
SANKEN |
N Channel Trench Power MOSFET | |
12 | GKI07113 |
SANKEN |
N Channel Trench Power MOSFET |