Plastic-Encapsulate Diodes FEATURES z Reverse working(Stand-off) voltages:5.0V. z Low leakage. Pb Lead-free z Response time is typically<1ns. z ESD Rating of Class 3(>16kV) per Human Body Model. z IEC61000-4-2Level 4ESD Protection. APPLICATIONS z Designed to protect voltage sensitive components From ESD and transient. Production specification GESD5V0D.
z Reverse working(Stand-off) voltages:5.0V. z Low leakage. Pb Lead-free z Response time is typically<1ns. z ESD Rating of Class 3(>16kV) per Human Body Model. z IEC61000-4-2Level 4ESD Protection. APPLICATIONS z Designed to protect voltage sensitive components From ESD and transient. Production specification GESD5V0D5 SOD-523 ORDERING INFORMATION Type No. Marking GESD5V0D5 ZF Package Code SOD-523 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits IEC 61000-4-2 (ESD) Air Contanct ESD voltage per human body model per machine model ±30 16 400 Total powe.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GESD5V0D1 |
GME |
Single Line TVS Diode | |
2 | GESD5V0D1 |
LGE |
Single Line TVS Diode | |
3 | GESD5V0B5 |
GME |
Transient Voltage Suppressor | |
4 | GESD5B5CU |
msksemi |
Diode | |
5 | GESD1060 |
GTM |
NPN EPITAXIAL PLANAR TRANSISTOR | |
6 | GESD880 |
GTM |
NPN EPITAXIAL PLANAR TRANSISTOR | |
7 | GESDBK5V0Y1 |
Leiditech |
TVS Diode | |
8 | GES060 |
GE |
NPN POWER TRANSISTOR | |
9 | GES061 |
GE |
NPN POWER TRANSISTOR | |
10 | GES062 |
GE |
NPN POWER TRANSISTOR | |
11 | GES2218 |
ETC |
(GES2218x / GES2219x) SILLCON TRANSISTORS | |
12 | GES2218A |
ETC |
(GES2218x / GES2219x) SILLCON TRANSISTORS |