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GESD5V0D1 Single Line TVS Diode FEATURES Suitable replacement for MLV’S ESD protection Low leakage current Low clamping voltage APPLICATIONS Single line TVS diode Computers and peripherals Communication systerms Audio and video equipment Pb Lead-free SOD-123 0.053(1.35) Max. 0.022(0.55) Typ. Min. 0.152(3.85) 0.140(3.55) 0.010(0.25) Min. 0.112(2.85) 0..
Suitable replacement for MLV’S ESD protection Low leakage current Low clamping voltage APPLICATIONS Single line TVS diode Computers and peripherals Communication systerms Audio and video equipment Pb Lead-free SOD-123 0.053(1.35) Max. 0.022(0.55) Typ. Min. 0.152(3.85) 0.140(3.55) 0.010(0.25) Min. 0.112(2.85) 0.100(2.55) 0.006(0.15) Typ. Min. 0.067(1.70) 0.055(1.40) 0.004(0.10) Max. Dimensions in inches and (millimeters) MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Reverse standoff voltage Peak pulse power dissipation(tp=8/20μs) Peak pulse current(tp=8/20μs) ESD (elec.
GESD5V0D1 - GME
Production specification Single Line TVS Diode FEATURES z Suitable replacement for MLV’S ESD protection z Low leakage c.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | GESD5V0D5 |
GME |
Plastic-Encapsulate Diodes |
|
| 2 | GESD5V0B5 |
GME |
Transient Voltage Suppressor |
|
| 3 | GESD5B5CU |
msksemi |
Diode |
|
| 4 | GESD1060 |
GTM |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 5 | GESD880 |
GTM |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 6 | GESDBK5V0Y1 |
Leiditech |
TVS Diode |
|
| 7 | GES060 |
GE |
NPN POWER TRANSISTOR |
|
| 8 | GES061 |
GE |
NPN POWER TRANSISTOR |
|
| 9 | GES062 |
GE |
NPN POWER TRANSISTOR |
|
| 10 | GES2218 |
ETC |
(GES2218x / GES2219x) SILLCON TRANSISTORS |
|
| 11 | GES2218A |
ETC |
(GES2218x / GES2219x) SILLCON TRANSISTORS |
|
| 12 | GES2219 |
ETC |
(GES2218x / GES2219x) SILLCON TRANSISTORS |
|