The GAL20VP8, with 64 mA drive capability and 15 ns maximum propagation delay time is ideal for Bus and Memory control applications. The GAL20VP8 is manufactured using Lattice Semiconductor's advanced E2CMOS process which combines CMOS with Electrically Erasable (E2) floating gate technology. High speed erase times (<100ms) allow the devices to be reprogramm.
• HIGH DRIVE E2CMOS® GAL® DEVICE — TTL Compatible 64 mA Output Drive — 15 ns Maximum Propagation Delay — Fmax = 80 MHz — 10 ns Maximum from Clock Input to Data Output — UltraMOS® Advanced CMOS Technology
• ENHANCED INPUT AND OUTPUT FEATURES — Schmitt Trigger Inputs — Programmable Open-Drain or Totem-Pole Outputs — Active Pull-Ups on All Inputs and I/O pins
• E CELL TECHNOLOGY — Reconfigurable Logic — Reprogrammable Cells — 100% Tested/100% Yields — High Speed Electrical Erasure (<100ms) — 20 Year Data Retention
• EIGHT OUTPUT LOGIC MACROCELLS — Maximum Flexibility for Complex Logic Designs — P.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GAL20V8 |
Lattice Semiconductor |
High Performance E2CMOS PLD Generic Array Logic | |
2 | GAL20V8A |
Lattice Semiconductor |
High Performance E2CMOS PLD Generic Array Logic | |
3 | GAL20V8A |
National Semiconductor |
Generic Array Logic | |
4 | GAL20V8A-10 |
National Semiconductor |
Generic Array Logic | |
5 | GAL20V8A-12 |
National Semiconductor |
Generic Array Logic | |
6 | GAL20V8A-15 |
National Semiconductor |
Generic Array Logic | |
7 | GAL20V8A-20 |
National Semiconductor |
Generic Array Logic | |
8 | GAL20V8Z |
Lattice Semiconductor |
Zero Power E2CMOS PLD | |
9 | GAL20V8ZD |
Lattice Semiconductor |
Zero Power E2CMOS PLD | |
10 | GAL20LV8 |
Lattice Semiconductor |
Low Voltage E2CMOS PLD Generic Array Logic | |
11 | GAL20LV8ZD |
Lattice Semiconductor |
Low Voltage/ Zero Power E2CMOS PLD Generic Array Logic | |
12 | GAL20RA10 |
Lattice Semiconductor |
High-Speed Asynchronous E2CMOS PLD Generic Array Logic |