The GAL20RA10 combines a high performance CMOS process with electrically erasable (E2) floating gate technology to provide the highest speed performance available in the PLD market. Lattice Semiconductor’s E2CMOS circuitry achieves power levels as low as 75mA typical ICC which represents a substantial savings in power when compared to bipolar counterparts. E.
• HIGH PERFORMANCE E2CMOS ® TECHNOLOGY — 7.5 ns Maximum Propagation Delay — Fmax = 83.3 MHz — 9 ns Maximum from Clock Input to Data Output — TTL Compatible 8 mA Outputs — UltraMOS® Advanced CMOS Technology
• 50% to 75% REDUCTION IN POWER FROM BIPOLAR — 75mA Typical Icc
• ACTIVE PULL-UPS ON ALL PINS
• E CELL TECHNOLOGY — Reconfigurable Logic — Reprogrammable Cells — 100% Tested/100% Yields — High Speed Electrical Erasure (<100 ms) — 20 Year Data Retention
• TEN OUTPUT LOGIC MACROCELLS — Independent Programmable Clocks — Independent Asynchronous Reset and Preset — Registered or Combinatorial wit.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GAL20LV8 |
Lattice Semiconductor |
Low Voltage E2CMOS PLD Generic Array Logic | |
2 | GAL20LV8ZD |
Lattice Semiconductor |
Low Voltage/ Zero Power E2CMOS PLD Generic Array Logic | |
3 | GAL20V8 |
Lattice Semiconductor |
High Performance E2CMOS PLD Generic Array Logic | |
4 | GAL20V8A |
Lattice Semiconductor |
High Performance E2CMOS PLD Generic Array Logic | |
5 | GAL20V8A |
National Semiconductor |
Generic Array Logic | |
6 | GAL20V8A-10 |
National Semiconductor |
Generic Array Logic | |
7 | GAL20V8A-12 |
National Semiconductor |
Generic Array Logic | |
8 | GAL20V8A-15 |
National Semiconductor |
Generic Array Logic | |
9 | GAL20V8A-20 |
National Semiconductor |
Generic Array Logic | |
10 | GAL20V8Z |
Lattice Semiconductor |
Zero Power E2CMOS PLD | |
11 | GAL20V8ZD |
Lattice Semiconductor |
Zero Power E2CMOS PLD | |
12 | GAL20VP8 |
Lattice Semiconductor |
High-Speed E2CMOS PLD Generic Array Logic |