Supply Voltage Input High Voltage Input Low Voltage Operation Temperature Min 2.8 0.8VCC 0 0 Typ 3.9 25 Max 5.0 - si yo m co 3 nf id e nt 0.3VCC 85 V ℃ ia l Units V V TO94 IC co () 1.400 0.700 0.500 0.360 0.380 0.360 4.980 3.780 3.450 nf A A1 A2 b b1 c D D1 E e e1 L θ () 0.055 0.028 0.020 0.014 0.015 0.014 0.196 0.149 0.136 0.050 TYP 3.910.
e 1.800 0.900 0.700 0.500 0.550 0.510 5.280 4.080 3.750 nt ia l SOT143 IC co () 0.900 0.000 0.900 0.300 0.750 0.080 2.800 nf () 0.035 0.000 0.035 0.012 0.030 0.003 0.110 0.045 0.004 0.041 0.020 0.035 0.006 0.118 A A1 A2 b b1 c D d E E1 e e1 L L1 θ si yo m 0.200 TYP. 1.200 2.250 0.950 TYP. 1.800 0.550 REF. 0.300 0° id e 1.150 0.100 1.050 0.500 0.900 0.150 3.000 1.400 2.550 2.000 0.500 8° 5 nt 0.008 TYP. 0.047 0.089 0.037 TYP. 0.071 0.022 REF. 0.012 0° 0.020 8° 0.079 0.055 0.100 ia l IC Notes :http://www.siyom.com Email:[email protected] : 21-1 601 :214028 :051.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GA5210PH |
ETC |
GA5210PH High-Pressure Process | |
2 | GA5210PL |
Siyang Microelectronics |
CMOS process / Toaster Series Control IC | |
3 | GA500TD60U |
International Rectifier |
HALF-BRIDGE IGBT DUAL INT-A-PAK | |
4 | GA50JT06-258 |
GeneSiC |
Junction Transistor | |
5 | GA50JT06-CAL |
GeneSiC |
OFF Silicon Carbide Junction Transistor | |
6 | GA50JT12-247 |
GeneSiC |
Normally - OFF Silicon Carbide Junction Transistor | |
7 | GA50JT12-CAL |
GeneSiC |
Junction Transistor | |
8 | GA50JT17-247 |
GeneSiC |
Junction Transistor | |
9 | GA50JT17-CAL |
GeneSiC |
Junction Transistor | |
10 | GA50K6A1A |
TE |
THERMISTORS | |
11 | GA50K6A1B |
TE |
THERMISTORS | |
12 | GA50K6A1C |
TE |
THERMISTORS |