GA50JT17-CAL - GeneSiC

GA50JT17-CAL Junction Transistor

Die Datasheet GA50JT17-CAL Normally – OFF Silicon Carbide Junction Transistor Features  210 °C Maximum Operating Temperature  Gate Oxide Free SiC Switch  Exceptional Safe Operating Area  Excellent Gain Linearity  Temperature Independent Switching Performance  Low Output Capacitance  Positive Temperature Coefficient of RDS,ON  Suitable for Connectin.

Features

 210 °C Maximum Operating Temperature
 Gate Oxide Free SiC Switch
 Exceptional Safe Operating Area
 Excellent Gain Linearity
 Temperature Independent Switching Performance
 Low Output Capacitance
 Positive Temperature Coefficient of RDS,ON
 Suitable for Connecting an Anti-parallel Diode VDS = 1700 V RDS(ON) = 20 mΩ ID @ 25 oC = 100 A hFE = 85 Die Size = 4.35 mm x 4.35 mm Advantages
 Compatible with Si MOSFET/IGBT Gate Drive ICs
 > 20 µs Short-Circuit Withstand Capability
 Lowest-in-class Conduction Losses
 High Circuit Efficiency
 Minimal Input Signal Distortion
 High Ampl.