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www.DataSheet4U.com ] HALF-BRODGE IGBT INT-A -PAK Short Circuit Rated Ultra-FastTM Speed IGBT PRELIMINARY GA50TS120K VCES=1200V VCE(on) typ.=2.5V @VGE=15V,IC=50A Features • • • • • • • Generation 5 IGBT NPT technology UltraFast optimized high operati.
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Generation 5 IGBT NPT technology UltraFast optimized high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode. Very low conduction and switching losses HEXFRED TM antiparallel diodes with ultra-soft recovery Industry standard package UL recongnition pending Short circuit rated 10 µs
Benefits
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Increased operating efficiency Direct mounting to heatsink Performance optimized for power conversion: UPS, SMPS, Welding,Mortor Control Lower EMI, requries less snubbing
Absolute Maximum Ratings
VCES IC @ Tc=25oC IC @ Tc=85oC ICM ILM IFM VGE VISOL PD @ TC.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | GA50TS120U |
International Rectifier |
HALF-BRIDGE IGBT INT-A-PAK |
|
| 2 | GA500TD60U |
International Rectifier |
HALF-BRIDGE IGBT DUAL INT-A-PAK |
|
| 3 | GA50JT06-258 |
GeneSiC |
Junction Transistor |
|
| 4 | GA50JT06-CAL |
GeneSiC |
OFF Silicon Carbide Junction Transistor |
|
| 5 | GA50JT12-247 |
GeneSiC |
Normally - OFF Silicon Carbide Junction Transistor |
|
| 6 | GA50JT12-CAL |
GeneSiC |
Junction Transistor |
|
| 7 | GA50JT17-247 |
GeneSiC |
Junction Transistor |
|
| 8 | GA50JT17-CAL |
GeneSiC |
Junction Transistor |
|
| 9 | GA50K6A1A |
TE |
THERMISTORS |
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| 10 | GA50K6A1B |
TE |
THERMISTORS |
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| 11 | GA50K6A1C |
TE |
THERMISTORS |
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| 12 | GA50K6A1D |
TE |
THERMISTORS |
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