PD - 50047D GA250TS60U "HALF-BRIDGE" IGBT INT-A-PAK Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- soft recovery • Industry standard package • UL approved Ultra-FastTM Spe.
• Generation 4 IGBT technology
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft recovery
• Industry standard package
• UL approved
Ultra-FastTM Speed IGBT
VCES = 600V VCE(on) typ. = 1.9V
@VGE = 15V, IC = 250A
Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS, SMPS, Welding
• Lower EMI, requires less snubbing
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C ICM ILM I.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GA250TD120U |
International Rectifier |
HALF-BRIDGE IGBT DOUBLE INT-A-PAK | |
2 | GA255DB3E2104MY02L |
Murata Electronics |
(GA255D) Chip Monolithic Caramic Capacitors | |
3 | GA255DB3Exxxx |
Murata Electronics |
(GA255D) Chip Monolithic Caramic Capacitors | |
4 | GA2.2K3A1A |
TE |
THERMISTORS | |
5 | GA2.2K3A1B |
TE |
THERMISTORS | |
6 | GA2.2K3A1C |
TE |
THERMISTORS | |
7 | GA2.2K3A1D |
TE |
THERMISTORS | |
8 | GA200 |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS | |
9 | GA200A |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS | |
10 | GA200HS60S |
International Rectifier |
Standard Speed IGBT | |
11 | GA200HS60S1 |
International Rectifier |
Standard Speed IGBT | |
12 | GA200HS60S1PBF |
Vishay Siliconix |
IGBT |