G4PC50W - International Rectifier

G4PC50W IRG4PC50W

www.DataSheet4U.com PD - 91657B IRG4PC50W INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT .

Features

• Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications
• Industry-benchmark switching losses improve efficiency of all power supply topologies
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability C VCES = 600V G E VCE(on) max. = 2.30V @VGE = 15V, IC = 27A n-channel Benefits
• Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode)
• Of particular benefit to single-ended.