SMD Type Transistors NPN Silicon Planar Medium Power High Gain Transistor FZT690B 0.1max +0.050.90 -0.05 +0.151.65 -0.15 Features Very low equivalent on-resistance; RCE(sat) 125mÙ at 2A. Gain of 400 at IC=1 Amp. Very low saturation voltage. SOT-223 6.50+0.2 -0.2 3.00+0.1 -0.1 4 Unit: mm 3.50+0.2 -0.2 0.90+0.2 -0.2 7.00+0.3 -0.3 Absolute Maximum Rating.
Very low equivalent on-resistance; RCE(sat) 125mÙ at 2A. Gain of 400 at IC=1 Amp. Very low saturation voltage. SOT-223 6.50+0.2 -0.2 3.00+0.1 -0.1 4 Unit: mm 3.50+0.2 -0.2 0.90+0.2 -0.2 7.00+0.3 -0.3 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector current Power dissipation Operating and storage temperature range 123 2.9 4.6 0.70+0.1 -0.1 1 base 2 collector 3 emitter Symbol VCBO VCEO VEBO IC ICM Ptot Tj,Tstg Rating 45 45 5 3 6 2 -55 to +150 Unit V V V A A W www.kexin.com.cn 1 SMD .
Green FZT690B 45V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN 5SOT223 Features BVCEO > 45V BVCBO > 45V IC = 3.0A Hig.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FZT692B |
Diodes |
NPN MEDIUM POWER HIGH GAIN TRANSISTOR | |
2 | FZT692B |
Kexin |
NPN Silcon Planar Medium Power High Gain Transistor | |
3 | FZT692BQ |
DIODES |
70V NPN MEDIUM POWER HIGH GAIN TRANSISTOR | |
4 | FZT694B |
Diodes |
120V NPN MEDIUM POWER TRANSISTOR | |
5 | FZT696B |
Diodes |
180V NPN HIGH VOLTAGE TRANSISTOR | |
6 | FZT600 |
Diodes |
140V NPN DARLINGTON TRANSISTOR | |
7 | FZT600B |
Diodes |
140V NPN DARLINGTON TRANSISTOR | |
8 | FZT603 |
Diodes |
80V NPN DARLINGTON TRANSISTOR | |
9 | FZT605 |
Diodes |
120V NPN DARLINGTON TRANSISTOR | |
10 | FZT649 |
Fairchild Semiconductor |
NPN Low Saturation Transistor | |
11 | FZT649 |
Diodes |
25V NPN HIGH PERFORMANCE TRANSISTOR | |
12 | FZT651 |
Kexin |
High Performance Transistors |