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SMD Type Transistors NPN Silicon Planar High Performance Transistors FZT651 0.1max +0.050.90 -0.05 +0.151.65 -0.15 Features 60 Volt VCEO. 3 Amp continuous current. Low saturation voltage. SOT-223 6.50+0.2 -0.2 3.00+0.1 -0.1 4 Unit: mm 3.50+0.2 -0.2 0.90+0.2 -0.2 7.00+0.3 -0.3 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-.
60 Volt VCEO. 3 Amp continuous current. Low saturation voltage. SOT-223 6.50+0.2 -0.2 3.00+0.1 -0.1 4 Unit: mm 3.50+0.2 -0.2 0.90+0.2 -0.2 7.00+0.3 -0.3 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector current Power dissipation Operating and storage temperature range 123 2.9 4.6 0.70+0.1 -0.1 1 base 2 collector 3 emitter Symbol VCBO VCEO VEBO IC ICM Ptot Tj,Tstg Rating 80 60 5 3 6 2 -55 to +150 Unit V V V A A W www.kexin.com.cn 1 SMD Type Electrical Characteristics Ta = 25 Parame.
FZT651 - Diodes
Features BVCEO > 60V IC = 3A High Continuous Current ICM = 6A Peak Pulse Current Low Saturation Voltage VCE(sat).
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FZT651Q |
Diodes |
NPN HIGH PERFORMANCE TRANSISTOR |
|
| 2 | FZT653 |
Diodes |
NPN HIGH PERFORMANCE TRANSISTOR |
|
| 3 | FZT653 |
Kexin |
NPN Silicon Planar High Performance Transistor |
|
| 4 | FZT655 |
Diodes |
NPN MEDIUM POWER TRANSISTOR |
|
| 5 | FZT657 |
Diodes |
NPN MEDIUM POWER HIGH VOLTAGE TRANSISTOR |
|
| 6 | FZT657 |
Kexin |
NPN Silicon Planar Medium Power Transistor |
|
| 7 | FZT658 |
Diodes |
400V NPN HIGH VOLTAGE TRANSISTOR |
|
| 8 | FZT600 |
Diodes |
140V NPN DARLINGTON TRANSISTOR |
|
| 9 | FZT600B |
Diodes |
140V NPN DARLINGTON TRANSISTOR |
|
| 10 | FZT603 |
Diodes |
80V NPN DARLINGTON TRANSISTOR |
|
| 11 | FZT605 |
Diodes |
120V NPN DARLINGTON TRANSISTOR |
|
| 12 | FZT649 |
Fairchild Semiconductor |
NPN Low Saturation Transistor |
|