FZT651Q - Diodes

FZT651Q NPN HIGH PERFORMANCE TRANSISTOR

This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of automotive applications. Features  BVCEO > 60V  IC = 3A High Continuous Current  ICM = 6A Peak Pulse Current  Low Saturation Voltage VCE(sat) < 300mV @1A  Complementary PNP Type: FZT751Q  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony F.

Features

 BVCEO > 60V
 IC = 3A High Continuous Current
 ICM = 6A Peak Pulse Current
 Low Saturation Voltage VCE(sat) < 300mV @1A
 Complementary PNP Type: FZT751Q
 Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability
 PPAP Capable (Note 4) Mechanical Data
 Case: SOT223
 Case Material: Molded Plastic. “Green” Molding Compound;
 UL Flammability Rating 94V-0
 Moisture Sensitivity: Level 1 per J-STD-020
 Terminals: Finish - Matte Tin Plated Leads; Solderable per MIL-STD-202, Method 208
 Weight.